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Abstract Giant spin-orbit torque (SOT) from topological insulators (TIs) provides an energy efficient writing method for magnetic memory, which, however, is still premature for practical applications due to the challenge of the integration with magnetic tunnel junctions (MTJs). Here, we demonstrate a functional TI-MTJ device that could become the core element of the future energy-efficient spintronic devices, such as SOT-based magnetic random-access memory (SOT-MRAM). The state-of-the-art tunneling magnetoresistance (TMR) ratio of 102% and the ultralow switching current density of 1.2 × 10⁵ A cm⁻²have been simultaneously achieved in the TI-MTJ device at room temperature, laying down the foundation for TI-driven SOT-MRAM. The charge-spin conversion efficiencyθ_SHin TIs is quantified by both the SOT-induced shift of the magnetic switching field (θ_SH = 1.59) and the SOT-induced ferromagnetic resonance (ST-FMR) (θ_SH = 1.02), which is one order of magnitude larger than that in conventional heavy metals. These results inspire a revolution of SOT-MRAM from classical to quantum materials, with great potential to further reduce the energy consumption. 

Abstract Room‐temperature magnetic skyrmion materials exhibiting robust topological Hall effect (THE) are crucial for novel nano‐spintronic devices. However, such skyrmion‐hosting materials are rare in nature. In this study, a self‐intercalated transition metal dichalcogenide Cr_1+xTe₂with a layered crystal structure that hosts room‐temperature skyrmions and exhibits large THE is reported. By tuning the self‐intercalate concentration, a monotonic control of Curie temperature from 169 to 333 K and a magnetic anisotropy transition from out‐of‐plane to the in‐plane configuration are achieved. Based on the intercalation engineering, room‐temperature skyrmions are successfully created in Cr_1.53Te₂with a Curie temperature of 295 K and a relatively weak perpendicular magnetic anisotropy. Remarkably, a skyrmion‐induced topological Hall resistivity as large as ≈106 nΩ cm is observed at 290 K. Moreover, a sign reversal of THE is also found at low temperatures, which can be ascribed to other topological spin textures having an opposite topological charge to that of the skyrmions. Therefore, chromium telluride can be a new paradigm of the skyrmion material family with promising prospects for future device applications. 

Abstract The search for efficient approaches to realize local switching of magnetic moments in spintronic devices has attracted extensive attention. One of the most promising approaches is the electrical manipulation of magnetization through electron‐mediated spin torque. However, the Joule heat generated via electron motion unavoidably causes substantial energy dissipation and potential damage to spintronic devices. Here, all‐oxide heterostructures of SrRuO₃/NiO/SrIrO₃are epitaxially grown on SrTiO₃single‐crystal substrates following the order of the ferromagnetic transition metal oxide SrRuO₃with perpendicular magnetic anisotropy, insulating and antiferromagnetic NiO, and metallic transition metal oxide SrIrO₃with strong spin–orbit coupling. It is demonstrated that instead of the electron spin torques, the magnon torques present in the antiferromagnetic NiO layer can directly manipulate the perpendicular magnetization of the ferromagnetic layer. This magnon mechanism may significantly reduce the electron motion‐related energy dissipation from electron‐mediated spin currents. Interestingly, the threshold current density to generate a sufficient magnon current to manipulate the magnetization is one order of magnitude smaller than that in conventional metallic systems. These findings suggest a route for developing highly efficient all‐oxide spintronic devices operated by magnon current.